| PART |
Description |
Maker |
| UPD45128163G5-A75-9JF UPD45128841G5-A10B-9JF UPD45 |
128M-bit Synchronous DRAM 4-bank/ LVTTL
OSCILLATORS 100PPM -20 70 3.3V 4 18.432MHZ PD HCMOS 5X7MM 4PAD SMD 128兆位同步DRAM 4银行，LVTTL
128M-bit Synchronous DRAM 4-bank, LVTTL 128兆位同步DRAM 4银行，LVTTL
|
NEC Corp.
NEC, Corp.
|
| M2V28S20ATP-6L M2V28S30ATP-6L M2V28S40ATP-6L M2V28 |
128M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V28S40ATP-7L M2V28S30ATP-7L M2V28S20ATP-7L M2V28 |
128M Synchronous DRAM 128M的同步DRAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M2V28S20ATP M2V28S20ATP-6 M2V28S20ATP-6L M2V28S20A |
128M Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Semiconductor
|
| UPD45128163G5-A75-9JF-E UPD45128163-E |
128M-bit Synchronous DRAM 4-bank, LVTTL
|
Elpida Memory
|
| M2S28D20 M2S28D20ATP M2V28D20ATP-10 M2V28D20ATP-75 |
128M Double Data Rate Synchronous DRAM
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| P2S28D30CTP P2S28D40CTP |
(P2S28D30CTP / P2S28D40CTP) 128M Double Data Rate Synchronous DRAM
|
MIRA
|
| EBE10UE8ACFA-8E-E |
128M X 64 SYNCHRONOUS DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Elpida Memory, Inc.
|
| PD45128163G5-A10I-9JF PD45128163G5-A10LI-9JF PD451 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
ELPIDA[Elpida Memory]
|
| PD45128163G5-A75SU-9JF PD45128163G5-A80SU-9JF PD45 |
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
|
ELPIDA[Elpida Memory]
|
| UPD45128841G5-A80T-9JF UPD45128841G5-A80LT-9JF PD4 |
SDRAM|4X4MX8|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range)
SDRAM|4X8MX4|CMOS|TSOP|54PIN|PLASTIC
128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
|
Elpida Memory, Inc.
|
